E2 series SiC MOSFET power modules, circuit structure is Half Bridge or H-Bridge. It integrates a high-performance SiC MOSFET chip and has a built-in temperature sensor. Especially suitable for solar inverter, DC-DC, energy storage and other applications——Package size：W47*L107*H18 mm
| Part Number | Type | Package | Circuit Diagram | Blocking Voltage（V） | Current（A） | RDs(on)（mΩ） | Tjmax（℃） |
|---|---|---|---|---|---|---|---|
| DFI300EL07F2O1 | IGBT | F2 | INPC | 650 | 300 | -- | 175 |
| DFI450EL07F2O1 | IGBT | F2 | INPC | 650 | 450 | -- | 150 |
| DFI600EL07F2O1 | IGBT | F2 | INPC | 650 | 600 | -- | 175 |
| DFI400EL10F2O1L | IGBT | F2 | INPC | 950 | 400 | -- | 175 |
| DFI800AL10F2O1 | IGBT | F2 | ANPC | 950 | 800 | -- | 175 |
