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E0 module

E0 series SiC MOSFET power module, circuit structure is Half Bridge or H-Bridge. It integrates a high-performance SiC MOSFET chip and has a built-in temperature sensor. Especially suitable for solar inverter, DC-DC, energy storage and other applications——Package size:W34.8*L62.8*H16 mm

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Part Number Type Package Circuit Diagram Blocking Voltage(V) Current(A) RDs(on)(mΩ) Tjmax(℃)
DFS40HF12EYQ1 SiC E0 Half Bridge 1200 55 40.0 175
DFS26HF12EYQ1 SiC E0 Half Bridge 1200 77 26.0 175
DFS20HF12EYQ1 SiC E0 Half Bridge 1200 95 20.0 175
DFS12HF12EYQ1 SiC E0 Half Bridge 1200 100 12.1 175
DFS09HF12EYC1 SiC E0 Half Bridge 1200 100 9.5 175
DFS09HF12EYQ1 SiC E0 Half Bridge 1200 150 9.2 175
DFS05HF12EYR1 SiC E0 Half Bridge 1200 150 5.5 175
DFS40HH12EYQ1 SiC E0 H-Bridge 1200 50 40.0 175
DFS26HH12EYQ1 SiC E0 H-Bridge 1200 75 26.0 175
DFS36FB12EYQ1 SiC E0 3-Phase 1200 25 36.0 175
DFS80FB12EYQ1 SiC E0 3-Phase 1200 25 80.0 175
DFS09CU12EYQ1 SiC E0 Boost 1200 150 9.2 175