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>Blocking Voltage 1200V >low on-resistance RDS(on)>Low Switching Losses>175 °C maximum junction temperature>Low Inductive Design >Si3N4 AMB substrate>Thermistor inside
>Blocking Voltage 1700V >low on-resistance RDS(on)>Low Switching Losses>175 °C maximum junction temperature>Low Inductive Design >Si3N4 AMB substrate>Thermistor inside
>Blocking Voltage 2200V >low on-resistance RDS(on)>Low Switching Losses>175 °C maximum junction temperature>Low Inductive Design >Si3N4 AMB substrate>Thermistor inside
FeaturesTjmax=175°CBlocking Voltage 1200VSi3N4 AMBHigh Reliability Epoxy ResinPotting Technology
